TAILSPIN engineers switchable graphene nanoribbons
Researchers from FLAG-ERA’s TAILSPIN project ‘take a dip’ in the quantum world and push ahead with low-power transistors based on semiconducting graphene nanoribbons
News articles
Wafer-scale production of graphene-based photonic devices
Graphene Flagship researchers have devised a wafer-scale fabrication method that paves the way to the next generation of telecom and datacom devices.
Graphene Flagship launches first European 'Pilot Line'
Funded by the European Commission, this €20 million project will enable large volume production of electronic devices based on two-dimensional materials.
Graphene for electronics applications with Lilei Ye
Graphene Flagship Business Developer for Electronics Applications, Lilei Ye, offers her thoughts on the current state of of graphene in the field
Combining graphene and nitrides for high-power, high-frequency electronics
Graphene Flagship partnering project GraNiTe exploited graphene and layered materials to enhance transistors for communications, diagnostics and security
Graphene trialling innovative table payments
Payper worked with the Graphene Flagship to develop a new contactless payment method using printable circuits
Graphene and layered materials will speed up quantum communications
Graphene Flagship Associate Member Nu Quantum promises new quantum devices thanks to 2D and layered materials
Low-power electronics with a spin
The Graphene Flagship speaks to Paolo Perna, leader of the SOgraphMEM consortium, about graphene's role in next-generation computer memory
Graphene Flagship researcher and Graphene Week 2020 Chair Paolo Samorì discusses the future of graphene and layered materials in data storage
Paolo Samorì talks about the role graphene and layered materials might play in the computers of the future
Graphene-sandwiched RAM devices shrunk beyond physical limits
Researchers at Graphene Flagship partner the Cambridge Graphene Centre, University of Cambridge, have developed a new type of resistive memory that can be scaled down beyond current limitations.
Layered heterostructures put a spin on magnetic memory devices
Interfacing graphene with layers of transition metal dichalcogenides enables electric field-controlled spintronic memory devices.
Thickness-dependent band gap inversion turns indium selenide on its head
Measurements show that indium selenide’s band gap inverts when deposited with six or more atomic layers, unlike transition metal dichalcogenides
New technique to 'clean' layered heterostructures improves device performance and paves the way to scalable production
Removing impurities between layered materials using heat and pressure increases charge carrier mobility and brings scalable methods closer to becoming a reality.
Graphene and layered materials boost silicon technologies
In a review published in Nature, Graphene Flagship researchers at ICFO, Spain and IMEC, Belgium, report on the current state, challenges, and opportunities of graphene and related material integration in silicon technologies.